Qué (quién) es Extended Data Out Dynamic Random Access Memory - definición

DYNAMIC RANDOM-ACCESS MEMORY INCLUDED IN A PROCESSOR CHIP OR PACKAGE

Embedded dynamic random access memory; Embedded DRAM

Extended Data Out Dynamic Random Access Memory

<storage> (EDO DRAM, EDO RAM) A type of DRAM designed to access nearby memory locations faster than FPM DRAM. Extended Data Out DRAM (EDO-DRAM) allows the data outputs to be kept active after the CAS signal goes inactive, using an additional signal OE to control the data outputs. This can be used in pipelined systems for overlapping accesses where the next cycle is started before the data from the last cycle is removed from the bus. EDO DRAM is primarily used with Intel's Pentium processors since with slower processors there is no significant performance gain. To make use of the advanced features of EDO an appropriate chipset, such as Triton, must be used. In early 1995, EDO DRAM was available for computers from Micron, Gateway 2000, and Intel Corporation; since then other manufactures followed suit. Note that in comparison to Burst EDO EDO is sometimes referred to as "Standard EDO". (1996-06-25)

MDRAM

RANDOM-ACCESS MEMORY THAT STORES EACH BIT OF DATA IN A SEPARATE CAPACITOR WITHIN AN INTEGRATED CIRCUIT

DRAM (memory); Pseudostatic RAM; PSRAM; Pseudostatic Random Access Memory; Window RAM; Dynamic RAM; EDO RAM; Fast Page Mode DRAM; FPM RAM; FPM DRAM; Fast Page Mode RAM; BEDO (RAM); MDRAM; Row Access Strobe; Column Access Strobe; CAS access time; Precharge interval; Row address select; Column address select; 1T DRAM; DDRAM; D-RAM; EDO DRAM; Fast page mode; Page mode memory; Extended Data Out RAM; BEDO RAM; Burst EDO; Multibank DRAM; Intel 1102; Burst EDO DRAM; Memory Timing; Dynamic Random Access Memory; FPRAM; Dynamic random access memory; Extended data out DRAM; Extended Data Out DRAM; Dynamic Random access memory; Static column RAM; Memory row; DRAM row; Row activation; WRAM (memory); 1T1C; 1t1c; 3T1C; Page mode RAM; Page mode DRAM; DRAM; D. R. A. M.; D.R.A.M.; DRAM memory; Asynchronous DRAM; EDO memory; Fast page mode DRAM; Window DRAM; Video DRAM; Nibble mode; EDO SGRAM

Multibank Dynamic Random Access Memory (Reference: RAM, DRAM, IC)

FPM DRAM

RANDOM-ACCESS MEMORY THAT STORES EACH BIT OF DATA IN A SEPARATE CAPACITOR WITHIN AN INTEGRATED CIRCUIT

Fast Page Mode Dynamic Random Access Memory

Wikipedia

EDRAM

Embedded DRAM (eDRAM) is dynamic random-access memory (DRAM) integrated on the same die or multi-chip module (MCM) of an application-specific integrated circuit (ASIC) or microprocessor. eDRAM's cost-per-bit is higher when compared to equivalent standalone DRAM chips used as external memory, but the performance advantages of placing eDRAM onto the same chip as the processor outweigh the cost disadvantages in many applications. In performance and size, eDRAM is positioned between level 3 cache and conventional DRAM on the memory bus, and effectively functions as a level 4 cache, though architectural descriptions may not explicitly refer to it in those terms.

Embedding memory on the ASIC or processor allows for much wider buses and higher operation speeds, and due to much higher density of DRAM in comparison to SRAM, larger amounts of memory can be installed on smaller chips if eDRAM is used instead of eSRAM. eDRAM requires additional fab process steps compared with embedded SRAM, which raises cost, but the 3× area savings of eDRAM memory offsets the process cost when a significant amount of memory is used in the design.

eDRAM memories, like all DRAM memories, require periodic refreshing of the memory cells, which adds complexity. However, if the memory refresh controller is embedded along with the eDRAM memory, the remainder of the ASIC can treat the memory like a simple SRAM type such as in 1T-SRAM.

eDRAM is used in various products, including IBM's POWER7 processor, and IBM's z15 mainframe processor (mainframes built which use up to 4.69 GB of eDRAM when 5 such add-on chips/drawers are used but all other levels from L1 up also use eDRAM, for a total of 6.4 GB of eDRAM). Intel's Haswell CPUs with GT3e integrated graphics, many game consoles and other devices, such as Sony's PlayStation 2, Sony's PlayStation Portable, Nintendo's GameCube, Nintendo's Wii, Nintendo's Wii U, Apple Inc.'s iPhone, Microsoft's Zune HD, and Microsoft's Xbox 360 also use eDRAM.

https://en.wikipedia.org/wiki/EDRAM